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LM25119PSQE/NOPB - 

DC/DC Controller, Current Mode, 4.5V to 42V, 2 Outputs, Synchronous Buck, 750kHz, LLP-32

TEXAS INSTRUMENTS LM25119PSQE/NOPB

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Gamintojo detalės nr.:
LM25119PSQE/NOPB
Užsakymo kodas:
1859817
Techninės specifikacijos:
(EN)
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Informacija apie produktą

:
LLP
:
-40°C
:
125°C
:
98%
:
32Pins
:
-
:
Synchronous Buck (Step Down)
:
-
:
4.5V
:
750kHz
:
Cut Tape
:
42V
:
2 Output
:
MSL 3 - 168 hours
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Produktų apžvalga

The LM25119PSQE/NOPB is a dual Synchronous Buck Controller intended for step-down regulator applications from a high voltage or widely varying input supply. The control method is based upon current-mode control utilizing an emulated current ramp. current-mode control provides inherent line feed-forward, cycle-by- cycle current limiting and ease of loop compensation. The use of an emulated control ramp reduces noise sensitivity of the pulse-width modulation circuit, allowing reliable control of very small duty cycles necessary in high input voltage applications. The switching frequency is programmable from 50 to 750kHz. The LM25119 drives external high-side and low-side NMOS power switches with adaptive dead- time control. User-selectable diode emulation mode enables discontinuous mode operation for improved efficiency at light load conditions. A high voltage bias regulator with automatic switch-over to external bias further improves efficiency.
  • Emulated peak current mode control
  • Easily configurable for dual outputs or interleaved single output
  • Robust 3.3A Peak gate drive
  • Optional diode emulation mode
  • Precision 1.5% Voltage reference
  • Programmable current limit
  • Hiccup mode overload protection
  • Programmable soft-start
  • Programmable line under-voltage lockout
  • Automatic switch-over to external bias supply
  • Channel2 enable logic input
  • Green product and no Sb/Br

Pritaikymas

Power Management, Automotive

Įspėjimai

Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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