DS1250W-100IND+

The DS1250W-100IND+ is a 3.3V, 4096K non-volatile SRAM in 32 pin EDIP package. This fully static SRAM is organized as 524,288words by 8bits. Each complete NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. Whenever this condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. This device can be used in place of existing 512K x 8 static RAMs directly conforming to the popular byte-wide standard. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

• Power supply voltage range from 3V to 3.6V
• Operating temperature range from -40°C to 85°C
• 10 years minimum data retention in the absence of external power
• Replaces 512K x 8 volatile static RAM, EEPROM or flash memory
• Operating current of 50mA
• Low power CMOS technology, unlimited write cycles
• Read and write access time of 100ns
• Write protection voltage of 2.9V
• Data is automatically protected during power loss
• Built-in switch disconnects the lithium source until the user first applies VCC

Pritaikymas

Embedded Design & Development

Pastabos

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