HMC529LP5E

HMC529LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +8dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. It is widely used in application such as VSAT radio, point to point/multipoint radio, test equipment & industrial controls, military end-use etc.

• Phase noise is -110dBc/Hz typical at (100KHz)
• Tune voltage is 2V to 13V
• Supply current is 260mA typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
• Output return loss is 8dB typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
• Frequency drift rate is 1.2MHz/°C typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
• No external resonator needed
• Dual output is Fo = 12.4GHz to 13.4GHz, Fo/2 = 6.2GHz to 6.7GHz
• Operating temperature is -40°C to +85°C
• Package style is 32-lead SMT

Pastabos

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