MB85R1001ANC-GE1

The MB85R1001ANC-GE1 is a 1MB Ferroelectric Random Access Memory (FRAM) chip consisting of 131072 words x 8-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

• Operating power supply voltage - 3 to 3.6V
• Data retention - 10 years
• Input rising/falling time - 5ns
• Input/output evaluation level - 2/0.8V
• Output impedance - 50pF

Pritaikymas

Computers & Computer Peripherals, Industrial

Įspėjimai

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.