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The MB85RC128PNF-G-JNE1 is a 128kB I²C Ferroelectric Random Access Memory (FRAM) stand-alone chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RC128 adopts the 2-wire serial interface. Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at least 10¹⁰ cycles, significantly out performing flash memory and E²PROM in the number. The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash memory nor E²PROM.
- Operating frequency - 400kHz maximum
- 2-wire serial interface
- Operating power supply voltage - 2.7 to 3.6V
- Low power consumption
- Data retention - 10 years
Pritaikymas
Computers & Computer Peripherals, Industrial
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
FRAM
16K x 8bit
900ns
8Pins
3.6V
85°C
MSL 3 - 168 hours
128Kbit
I2C
SOP
2.7V
-40°C
-
No SVHC (17-Dec-2014)
Techniniai duomenys (4)
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Rasta produktų: 1
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:Japan
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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