5 000 Galite rezervuoti pageidaujamą kiekį dabar
Kiekis | |
---|---|
1+ | 1,550 € |
10+ | 1,080 € |
100+ | 0,768 € |
500+ | 0,686 € |
1000+ | 0,644 € |
5000+ | 0,536 € |
Informacija apie produktą
Produktų apžvalga
The BSZ520N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Optimized for DC-to-DC conversion
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Pritaikymas
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
N Channel
21A
PG-TSDSON
10V
57W
150°C
-
No SVHC (21-Jan-2025)
150V
0.052ohm
Surface Mount
3V
8Pins
-
MSL 1 - Unlimited
Techniniai duomenys (1)
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:Malaysia
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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