CY15B116QI-20BKXC

CY15B116QI-20BKXC is a EXCELON™ LP ferroelectric RAM that is a low-power, 16Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, this performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It is capable of supporting 10^15 read/write cycles, or 1000 million times more write cycles than EEPROM.

• 16-Mbit density, SPI F-RAM interface, inrush current control, 20MHz frequency
• Voltage range from 1.8V to 3.6V, BK - 24-ball FBGA package type
• Commercial temperature range from 0°C to +70°C
• 16Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8
• Infineon instant non-volatile write technology
• Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI), up to 20MHz frequency
• Software protection using write disable (WRDI) instruction
• Manufacturer ID and product ID, unique device ID, serial number
• Stored content can survive up to three standard reflow soldering cycles