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Kiekis | |
---|---|
1+ | 18,070 € |
5+ | 16,770 € |
10+ | 15,460 € |
50+ | 11,480 € |
100+ | 10,340 € |
250+ | 10,330 € |
Informacija apie produktą
Produktų apžvalga
The IPW65R019C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Pritaikymas
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Power Management
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
N Channel
75A
TO-247
10V
446W
150°C
-
No SVHC (21-Jan-2025)
650V
0.019ohm
Through Hole
3.5V
3Pins
-
-
Techniniai duomenys (1)
Alternatyvos IPW65R019C7FKSA1
Rasta produktų: 5
Susiję produktai
Rasta produktų: 8
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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