IRLR2905TRPBF
Power MOSFET, N Channel, 55 V, 42 A, 0.027 ohm, TO-252AA, Surface Mount
6 000 Galite rezervuoti pageidaujamą kiekį dabar
| Kiekis | |
|---|---|
| 5+ | 1,720 € |
| 50+ | 0,925 € |
| 100+ | 0,661 € |
| 500+ | 0,549 € |
| 1000+ | 0,510 € |
Informacija apie produktą
Produktų apžvalga
The IRLR2905TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Pritaikymas
Power Management
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
N Channel
42A
TO-252AA
10V
110W
175°C
-
No SVHC (21-Jan-2025)
55V
0.027ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Techniniai duomenys (3)
Alternatyvos IRLR2905TRPBF
Rasta produktų: 6
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:Mexico
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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