Informacija apie produktą
Alternatyvos HGTG30N60A4D
Rasta produktų: 1
Produktų apžvalga
The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 60ns at TJ = 125°C Fall time
Techniniai duomenys
75A
463W
TO-247
150°C
-
Lead (23-Jan-2024)
2.6V
600V
3Pins
Through Hole
-
Techniniai duomenys (2)
Susiję produktai
Rasta produktų: 3
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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