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| Kiekis | |
|---|---|
| 5+ | 0,478 € |
| 50+ | 0,365 € |
| 100+ | 0,233 € |
| 500+ | 0,176 € |
| 1500+ | 0,158 € |
Informacija apie produktą
Produktų apžvalga
The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Low gate charge
- Optimized for use in high frequency DC/DC converters
Techniniai duomenys
N Channel
1.7A
SuperSOT
10V
500mW
150°C
-
No SVHC (27-Jun-2024)
60V
0.1ohm
Surface Mount
2.4V
3Pins
-
-
Techniniai duomenys (3)
Alternatyvos FDN5630
Rasta produktų: 1
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:Philippines
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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