STPSC10H065G-TR
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 10 A, 28.5 nC, TO-263
Reikia daugiau?
| Kiekis | |
|---|---|
| 100+ | 1,900 € |
| 500+ | 1,530 € |
| 1000+ | 1,430 € |
Informacija apie produktą
Produktų apžvalga
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Pritaikymas
Industrial
Techniniai duomenys
650V
650V
28.5nC
3 Pin
Surface Mount
No SVHC (21-Jan-2025)
Single
10A
TO-263 (D2PAK)
175°C
-
Techniniai duomenys (2)
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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