STPSC12H065CT
Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 12 A, 18 nC, TO-220AB
Reikia daugiau?
| Kiekis | |
|---|---|
| 1+ | 4,750 € |
| 5+ | 4,740 € |
| 10+ | 4,730 € |
| 50+ | 4,720 € |
| 100+ | 4,710 € |
| 250+ | 4,700 € |
Informacija apie produktą
Produktų apžvalga
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
-
650V
18nC
3 Pin
Through Hole
No SVHC (17-Dec-2015)
Dual Common Cathode
12A
TO-220AB
175°C
-
Techniniai duomenys (3)
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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