STPSC20H12DY
Silicon Carbide Schottky Diode, Single, 1.2 kV, 38 A, 129 nC, TO-220AC
Reikia daugiau?
| Kiekis | |
|---|---|
| 1+ | 10,340 € |
| 5+ | 8,270 € |
| 10+ | 6,190 € |
| 50+ | 5,690 € |
| 100+ | 5,360 € |
| 250+ | 5,250 € |
Informacija apie produktą
Produktų apžvalga
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Įspėjimai
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Techniniai duomenys
-
1.2kV
129nC
2 Pin
Through Hole
No SVHC (12-Jan-2017)
Single
38A
TO-220AC
175°C
AEC-Q101
Techniniai duomenys (3)
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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