Reikia daugiau?
| Kiekis | |
|---|---|
| 1+ | 131,580 € |
| 5+ | 128,950 € |
| 10+ | 126,320 € |
| 50+ | 123,690 € |
Informacija apie produktą
Produktų apžvalga
The TS1GSK64V6H is a 512M x 8 DRAM high-speed low power memory DDR3 SO-DIMM use DDR3 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- 8-bit Pre-fetch
- Internal calibration through ZQ pin
- On die termination with ODT pin
- Serial presence detect with EEPROM
- Asynchronous reset
Pritaikymas
Computers & Computer Peripherals, Portable Devices
Techniniai duomenys
8GB
PC3-12800
Notebook SODIMM
1.425V
1.5V
85°C
No SVHC (14-Jun-2023)
1600MHz
204-Pin DDR3 SO-DIMM
-
1.575V
0°C
-
Techniniai duomenys (1)
Teisinė ir aplinkosaugos informacija
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesasKilmės šalis:China
Šalis, kurioje paskutinį kartą gamintojo atliktas stambus gamybos procesas
„RoHS“
„RoHS“
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